Publication Date
2017-12-06
Availability
Open access
Embargo Period
2017-12-06
Degree Type
Dissertation
Degree Name
Doctor of Philosophy (PHD)
Department
Electrical and Computer Engineering (Engineering)
Date of Defense
2017-07-27
First Committee Member
Sung Jin Kim
Second Committee Member
Michael Wang
Third Committee Member
Weizhao Zhao
Fourth Committee Member
Mei-Ling Shyu
Fifth Committee Member
Ashutosh Agarwal
Abstract
Plasmon based field effect transistors (FET) can be used to convert energy induced by incident optical radiation to electrical energy. Plasmonic FETs can efficiently detect incident light and amplify it by coupling to resonant plasmonic modes thus improving selectivity and signal to noise ratio. The spectral responses can be tailored both through optimization of nanostructure geometry as well as constitutive materials. In this paper, we studied various plasmonic nanostructures using gold for a wideband spectral response from visible to near IR. We show using empirical data and simulation results that detection loss exponentially increases as the volume of metal nanostructure increases and also a limited spectral response is possible using gold nanostructures in a plasmon to electric conversion device. Finally, we demonstrate a plasmon field effect transistor that offers a broadband spectral response from visible to telecommunication wavelengths.
Keywords
Plasmon Field Effect Transistor, broadband photodetection, Localized surface plasmon resonance
Recommended Citation
Cho, Seongman, "Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor" (2017). Open Access Dissertations. 1985.
https://scholarlyrepository.miami.edu/oa_dissertations/1985