Publication Date



Open access

Embargo Period


Degree Type


Degree Name

Doctor of Philosophy (PHD)


Electrical and Computer Engineering (Engineering)

Date of Defense


First Committee Member

Sung Jin Kim

Second Committee Member

Michael Wang

Third Committee Member

Weizhao Zhao

Fourth Committee Member

Mei-Ling Shyu

Fifth Committee Member

Ashutosh Agarwal


Plasmon based field effect transistors (FET) can be used to convert energy induced by incident optical radiation to electrical energy. Plasmonic FETs can efficiently detect incident light and amplify it by coupling to resonant plasmonic modes thus improving selectivity and signal to noise ratio. The spectral responses can be tailored both through optimization of nanostructure geometry as well as constitutive materials. In this paper, we studied various plasmonic nanostructures using gold for a wideband spectral response from visible to near IR. We show using empirical data and simulation results that detection loss exponentially increases as the volume of metal nanostructure increases and also a limited spectral response is possible using gold nanostructures in a plasmon to electric conversion device. Finally, we demonstrate a plasmon field effect transistor that offers a broadband spectral response from visible to telecommunication wavelengths.


Plasmon Field Effect Transistor, broadband photodetection, Localized surface plasmon resonance