Publication Date

2017-12-06

Availability

Open access

Embargo Period

2017-12-06

Degree Type

Dissertation

Degree Name

Doctor of Philosophy (PHD)

Department

Electrical and Computer Engineering (Engineering)

Date of Defense

2017-07-27

First Committee Member

Sung Jin Kim

Second Committee Member

Michael Wang

Third Committee Member

Weizhao Zhao

Fourth Committee Member

Mei-Ling Shyu

Fifth Committee Member

Ashutosh Agarwal

Abstract

Plasmon based field effect transistors (FET) can be used to convert energy induced by incident optical radiation to electrical energy. Plasmonic FETs can efficiently detect incident light and amplify it by coupling to resonant plasmonic modes thus improving selectivity and signal to noise ratio. The spectral responses can be tailored both through optimization of nanostructure geometry as well as constitutive materials. In this paper, we studied various plasmonic nanostructures using gold for a wideband spectral response from visible to near IR. We show using empirical data and simulation results that detection loss exponentially increases as the volume of metal nanostructure increases and also a limited spectral response is possible using gold nanostructures in a plasmon to electric conversion device. Finally, we demonstrate a plasmon field effect transistor that offers a broadband spectral response from visible to telecommunication wavelengths.

Keywords

Plasmon Field Effect Transistor, broadband photodetection, Localized surface plasmon resonance

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